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MOTOROLA The RF Line
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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RF LDMOS Integrated Power Amplifiers
The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. * Typical CDMA Performance: 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, 2-Carrier N-CDMA, IS -95, 869-894 MHz, 1.2288 MHz Channel Bandwidth, IM3 Measured in 1.2288 Integrated Bandwidth, ACPR Measured in 30 kHz Integrated Bandwidth, 2.5 MHz Carrier Spacing Output Power -- 5 Watts (Avg.) Power Gain -- 31 dB Efficiency -- 21% Adjacent Channel Power -- -52 dBc IRL -- -14 dB * Typical Performance @ P1dB: 921-960 MHz, 26 Volts Output Power -- 30 Watts P1dB Power Gain -- 30 dB Efficiency -- 45% * On Chip Matching (50 Ohm Input, >4 Ohm Output) * Integrated Temperature Compensation Capability * Integrated ESD Protection * Usable for SCPA and MCPA Architecture * Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 30 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA * Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance * Also Available in Gull Wing for Surface Mount * Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWIC930R1 MWIC930GR1
N-CDMA, W-CDMA, GSM/GSM EDGE, 746 - 960 MHz, 30 W, 26-28 V RF LDMOS INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329-09 TO-272 WB-16 PLASTIC MWIC930R1
CASE 1329A-03 TO-272 WB-16 GULL PLASTIC MWIC930GR1
PIN CONNECTIONS
VDS1 RFin RFout/VDS2 GND NC NC VDS1 NC RFin VGS1 VGS2 Temperature Compensation NC VGS1 VGS2 NC GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC
14
RFout / VDS2
Functional Block Diagram
13 12
NC GND
(Top View)
REV 1
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MWIC930R1 MWIC930GR1 1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value 65 -0.5, +15 -65 to +175 175 Unit Vdc Vdc C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case GSM Application (Pout = 30 W CW) GSM EDGE Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA Symbol RJC 1.22 Max Unit C/W
1.39
Freescale Semiconductor, Inc...
CDMA Application (Pout = 5 W CW)
1.50
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C2 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22-A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit CDMA FUNCTIONAL TESTS (In Motorola CDMA Test Fixture, 50 ohm system) 1-Carrier N-CDMA, 869-894 MHz, IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 through 13. Common-Source Amplifier Power Gain (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) Drain Efficiency (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) Adjacent Channel Power Ratio (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 869-894 MHz) Input Return Loss (VDD = 27 Vdc, Pout = 5 W Avg., 1-Carrier N-CDMA, IDQ1 = 90 mA, IDQ2 = 240 mA, f = 880 MHz) Gps 28 31 -- dB
18
21
--
%
ACPR
--
-52
-48
dBc
IRL
--
-12
-9
dB
(continued)
MWIC930R1 MWIC930GR1 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS - continued (TC = 25C, unless otherwise noted)
Characteristic Quiescent Current Accuracy over Temperature (-10 to 85C) at Nominal Value Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW (Characterize from 840-920 MHz) Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW (Characterize from 840-920 MHz) Delay @ Pout = 5 W CW Insertion Phase Window @ Pout = 5 W CW Symbol IQT GF Delay Min -- -- -- -- -- Typ 5 0.3 0.6 3 15 Max -- -- -- -- -- Unit % dB ns PERFORMANCE TESTS (In Motorola Test Fixture) VDS = 26 V, IDQ1 = 90 mA, IDQ2 = 240 mA
GSM/GSM EDGE FUNCTIONAL TESTS (In Motorola GSM Test Fixture) VDS = 27 V, IDQ1 = 90 mA, IDQ2 = 240 mA, 921-960 MHz, CW Output Power at 1dB Compression Point P1dB -- 30 -- Watts Common-Source Amplifier Power Gain @ P1dB Gps IRL IMD3 IMD3 backoff GF -- -- -- -- -- -- -- 30 45 -12 -30 -45 0.3 0.6 -- -- -- -- -- -- -- dB % dB dBc dBc dB
Freescale Semiconductor, Inc...
Drain Efficiency @ P1dB Input Return Loss @ P1dB Third Order Intermodulation Distortion (15 W, 2-Tone 100 kHz Spacing) Third Order Intermodulation Distortion (1 W, 2-Tone 100 kHz Tone Spacing) Gain Flatness 921-960 MHz @ Pout = 5 W CW Deviation from Linear Phase 921-960 MHz @ Pout = 5 W CW
MOTOROLA RF DEVICE DATA
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MWIC930R1 MWIC930GR1 3
Freescale Semiconductor, Inc.
VD1 C15 RF INPUT C12 C9 1 2 NC 3 NC 4 5 6 7 NC 8 9 10 NC 11 Z7 16 NC 15 Z6 Z2 Z3 C1 Temperature Compensation NC 13 12 Z9 Z4 C2 C3 Z5 Z8 C4 C5 C6 VD2
Z1
RF OUTPUT
14
VG1 R1 VG2 R2 C14 R4 C11 C8 C13 R3 C10 C7
Freescale Semiconductor, Inc...
Z1 Z2 Z3 Z4
0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.0938 Microstrip 0.08425 x 0.584 Microstrip
Z5 Z6 Z7 Z8 Z9 PCB
0.0438 x 0.2009 Microstrip 0.0504 x 0.528 Microstrip 0.0504 x 0.150 Microstrip 0.0254 x 0.880 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 1. 746-960 MHz Test Fixture Schematic
Table 1. 746-960 MHz Test Fixture Component Designations and Values
Part *C1 *C2 *C3 *C4, C5, C7, C8, C9 C6, C13, C14, C15 C10, C11, C12 R1, R2 R3, R4 Description 15 pF High Q Capacitor 6.8 pF High Q Capacitor - GSM Fixture 8.2 pF High Q Capacitor - CDMA Fixture 5.6 pF High Q Capacitor 47 pF High Q Capacitors 1 F Chip Capacitors 10 nF Chip Capacitors 1 kW, 1/8 W Chip Resistors 1 MW, 1/4 W Chip Resistors Value, P/N or DWG ATC600S150JW ATC600S6R8CW ATC600S8R2CW ATC600S5R6CW ATC600S470JW GRM42-2X7R105K050AL C0603C103J5R RM73B2AT102J RM73B2BT105J Manufacturer ATC ATC ATC ATC Murata Kemet KOA Speer KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VD1
C15
MWIC930 Rev 0 VD2
C6
Freescale Semiconductor, Inc...
C5
C12 RF Input C7 R3 C13 C4 R1 VG1 C10 C11 C8 C9 C1 C2 C3 RF Output
R4
C14
R2
VG2
Figure 2. 746-960 MHz Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MWIC930R1 MWIC930GR1 5
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 -55 7th Order 0.1 1 10 100 VDD = 27 Vdc Pout = 15 W (Avg.) IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz Two-Tone PEP = 30 W 34 33 G ps , POWER GAIN (dB) 32 31 30 29 28 27 0 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 5 10 15 20 25 30 35 40 Pout, OUTPUT POWER (WATTS) 85_C 25_C TC = -30_C
3rd Order 5th Order
TONE SPACING (MHz)
Freescale Semiconductor, Inc...
Figure 3. Two-Tone Broadband Performance
Figure 4. Power Gain versus Output Power
32 30 G ps , POWER GAIN (dB) 28 26 24 22 20 15 dBm 5 10 15 20 25 3 dBm 9 dBm 12 dBm IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 30 35 VDD, SUPPLY VOLTAGE (VOLTS) 6 dBm Pin = 0 dBm G ps , POWER GAIN (dB)
40 38 36 34 32 30 28 26 24 22 20 700 750 800 850 900 TC = -30_C 25_C 85_C VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 950 1000 f, FREQUENCY (MHz)
Figure 5. Power Gain versus Supply Voltage
Figure 6. Power Gain versus Frequency
-16 IRL, INPUT RETURN LOSS (dB) -18 -20 -22 -24 -26 -28 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 0
TC = 85_C
VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 9-Channel IS-95 CDMA
TC = 85_C
25_C -30_C
25_C -30_C
0
5
10
15
20
25
30
35
40
1
2
3
4
5
6
7
8
9
10
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 7. Input Return Loss versus Output Power
Figure 8. Adjacent Channel Power Ratio versus Output Power
MWIC930R1 MWIC930GR1 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
55 PAE, POWER ADDED EFFICIENCY (%) 50 45 40 35 30 25 20 15 10 0 5 10 15 20 25 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 30 35 40 Pout, OUTPUT POWER (WATTS) TC = -30_C 58 PAE, POWER ADDED EFFICIENCY (%) 25_C 85_C 56 54 52 50 48 46 44 42 40 700 750 800 850 900 VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 950 1000 f, FREQUENCY (MHz) TC = -30_C 25_C 85_C
Freescale Semiconductor, Inc...
Figure 9. Power Added Efficiency versus Output Power
Figure 10. Power Added Efficiency versus Frequency
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
Zo = 50 Zload f = 960 MHz f = 740 MHz
1
f = 740 MHz
Zin
f = 960 MHz
Freescale Semiconductor, Inc...
VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. f MHz 740 760 780 800 820 840 860 880 900 920 940 960 Zin Zload Zin 26.61 - j3.68 26.88 - j0.53 28.22 + j2.21 30.57 + j4.31 33.79 + j5.53 37.83 + j5.30 41.92 + j3.42 45.58 - j0.40 47.77 - j5.84 47.83 - j12.15 45.55 - j18.05 41.58 - j22.64 Zload 4.28 + j2.99 4.37 + j2.91 4.39 + j2.79 4.34 + j2.64 4.21 + j2.54 4.06 + j2.52 3.90 + j2.58 3.73 + j2.70 3.59 + j2.93 3.43 + j3.17 3.28 + j3.44 3.13 + j3.75
= Device input impedance as measured from RF input to ground. = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Z
in
Z
load
Figure 11. Series Equivalent Input and Output Impedance
MWIC930R1 MWIC930GR1 8
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MWIC930R1 MWIC930GR1 9
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
r1 CA B
2X
B
PIN ONE INDEX
E1
aaa
M
A
NOTE 6
aaa
M
e1 e2 D1 aaa e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
Freescale Semiconductor, Inc...
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
Y
ZONE "J"
F
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329-09 ISSUE J TO-272 WB-16 PLASTIC MWIC930R1
MWIC930R1 MWIC930GR1 10
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CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
4X
b1 CA
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
2X
aaa
M
r1 CAB
E1
B
A
PIN ONE INDEX
4X
aaa
M
b1 CA
NOTE 6
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
Freescale Semiconductor, Inc...
aaa
M
aaa
M
b CA
E
DETAIL Y
DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --.270 --.011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --6.86 --0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A-03 ISSUE B TO-272 WB-16 GULL PLASTIC MWIC930GR1
MOTOROLA RF DEVICE DATA
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EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y-Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
MWIC930R1 MWIC930GR1 11
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MWIC930R1 MWIC930GR1 12
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MOTOROLA RF DEVICE DATA
MWIC930/D

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